MSJWFR60N60-BP

Single FETs, MOSFETs Overview

The MSJWFR60N60-BP is an N-channel Super-Junction Power MOSFET manufactured by Micro Commercial Components (MCC). It features a TO-247AB(E) package and utilizes silicon technology. Key electrical parameters include a Drain-Source Voltage of 600 V, Continuous Drain Current of 36.7 A at TC=25°C, and Pulsed Drain Current of 232 A. The device exhibits a maximum Drain-Source On-Resistance of 0.205 Ω at VGS=10V and ID=37.5A. Total power dissipation is rated at 237 W at TC=25°C. Single Avalanche Energy is specified as 223 mJ starting from TJ=25°C. Operating junction temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Super Junction technology designed for high voltage applications
• Soft switching capability with fast reverse recovery diode
• Ultra-low gate charge resulting in lower driving requirements
• Epoxy meets UL 94 V-0 flammability rating

Single FETs, MOSFETs Applications

• High voltage power supply circuits
• Industrial motor control systems
• Uninterruptible power supply (UPS) units
• DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the authenticity of the MSJWFR60N60-BP component by purchasing exclusively from Micro Commercial Components or their authorized distributors. Counterfeit parts pose significant risks; MCC does not provide warranty coverage for components sourced from unauthorized channels. Ensure the ordering suffix 'BP' corresponds to RoHS compliance and lead-free finish specifications as defined in the official datasheet. Confirm package type matches TO-247AB(E) before integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust high-voltage handling with efficient thermal performance. The Super-Junction architecture supports low conduction losses compared to standard planar technologies. Evaluate the thermal resistance values against your heatsinking strategy, noting the junction-to-case resistance. Consider the avalanche energy rating if inductive load switching is present. Ensure gate drive voltages align with the specified threshold and on-resistance test conditions for optimal efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the MSJWFR series of N-channel Super-Junction Power MOSFETs from Micro Commercial Components. The series is characterized by advanced trench gate technology optimized for high-frequency and high-efficiency switching applications. The TO-247AB(E) package provides mechanical stability and thermal dissipation capabilities suitable for through-hole mounting in power electronics assemblies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 600V rating, N-channel configuration, and TO-247AB(E) footprint. Verify that alternative devices meet or exceed the 36.7 A continuous current and 0.205 Ω on-resistance specifications. Check compatibility with the 237 W power dissipation limit and thermal resistance characteristics to ensure equivalent circuit performance.