Single Bipolar Transistors NJVMJB41CT4G product image

NJVMJB41CT4G

$1.29
  • Description:TRANS NPN 100V 6A D2PAK-3
  • Series:-

SKU:b805ae9f8783 Category: Brand:

  
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NJVMJB41CT4G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 100V 6A D2PAK-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NJVMJB41CT4G

  • Description:TRANS NPN 100V 6A D2PAK-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max):700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 3A, 4V
  • Power - Max:2 W
  • Frequency - Transition:3MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for NJVMJB41CT4G

NJVMJB41CT4G

Single Bipolar Transistors Overview

The NJVMJB41CT4G is a single NPN bipolar junction transistor manufactured by onsemi, housed in a D2PAK-3 surface-mount package. It features a maximum collector-emitter voltage (Vceo) of 100 V and a continuous collector current rating of 6 A. The device exhibits a transition frequency of 3 MHz and a maximum power dissipation of 2 W. Key electrical characteristics include a DC current gain (hFE) minimum of 15 at 3 A and 4 V, with a saturation voltage of 1.5 V at 600 mA base current and 6 A collector current. Operating temperature range extends from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High current handling capability with a 6 A continuous collector current rating suitable for power switching applications.
  • Robust thermal performance allowing operation up to a junction temperature of 150°C within a D2PAK-3 package.
  • Optimized for high-speed switching with a 3 MHz transition frequency.

Single Bipolar Transistors Applications

  • General-purpose power switching circuits
  • Low-frequency amplification stages
  • Driver circuits for loads requiring up to 6 A

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and REACH declarations via the manufacturer's material declaration tools prior to integration. Check for any recent Product Change Notifications (PCN) regarding assembly or marking updates that may affect part identification or sourcing channels.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with 100 V breakdown and 6 A current capacity is required in a surface-mount form factor. Ensure the application design accounts for the 2 W power dissipation limit and appropriate heatsinking strategies given the D2PAK-3 thermal characteristics. Verify that the 3 MHz transition frequency meets the switching speed requirements of the target circuit.

Single Bipolar Transistors Part Context

This part belongs to the MJB series of NPN transistors from onsemi, designed for general-purpose power applications. The MJB family typically offers a balance of high current density and reliable switching performance in standard surface-mount packages like D2PAK, catering to industrial and consumer electronics markets.

Single Bipolar Transistors Replacement Considerations

MJD243G is a confirmed substitute part number within the same manufacturer portfolio.

NJVMJB41CT4GNJVMJB41CT4G
$1.29
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