NTD3055L104-1G

Single FETs, MOSFETs Overview

The NTD3055L104-1G is a single N-channel power MOSFET manufactured by onsemi, designed for low-voltage, high-speed switching applications. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 12A at ambient temperature. The device exhibits a maximum on-resistance of 104 milliohms when driven at 5V gate-source voltage. Key electrical characteristics include a gate charge of 20nC and an input capacitance of 440pF. It operates within a junction temperature range up to 155°C and is housed in a DPAK surface-mount package.

Single FETs, MOSFETs Feature Summary

• Logic-level gate drive capability optimized for 5V control signals
• High-speed switching performance suitable for efficient power conversion
• Robust thermal design with high power dissipation capacity

Single FETs, MOSFETs Applications

• Low voltage power supply circuits
• DC-DC converters
• Power motor control systems
• Bridge circuit configurations

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '-1G' to confirm RoHS compliance and lead-free status as per manufacturer declarations. Ensure the DPAK package variant matches the target PCB footprint requirements. Cross-reference the exact part number against official distributor catalogs to distinguish between tape-and-reel and cut-tape availability options before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring moderate current handling with logic-level interface compatibility. The 104 milliohm on-resistance offers a balance between conduction losses and switching speed. Consider the DPAK package thermal resistance for heat dissipation needs in compact layouts. Validate that the 60V voltage rating provides sufficient margin for the specific application's peak transient conditions.

Single FETs, MOSFETs Part Context

This device belongs to the NTD3055L series of N-channel power MOSFETs from onsemi. The series is engineered for general-purpose power switching tasks where efficiency and switching speed are critical. The specific model integrates advanced cell technology to minimize on-state resistance while maintaining reliable operation across wide temperature ranges typical in industrial and consumer electronics.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins if considering alternative manufacturers or different package styles such as TO-252 variants without suffixes.