NTP7D3N15MC

Single FETs, MOSFETs Overview

The NTP7D3N15MC is an N-channel enhancement-mode PowerTrench MOSFET manufactured by onsemi. It features a 150V drain-source voltage rating and supports a continuous drain current of 101A. The device exhibits a maximum on-resistance of 7.3mΩ at Vgs=10V. Key electrical parameters include a gate charge of 53nC, a threshold voltage of 4.5V, and a power dissipation capacity of 166W. It operates within a temperature range of -55°C to +175°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced PowerTrench shielding gate technology for optimized switching performance.
• Engineered with low reverse recovery charge to minimize electromagnetic interference.
• Subjected to 100% Unclamped Inductive Load (UIL) testing for enhanced reliability.

Single FETs, MOSFETs Applications

• Power management systems
• Motor drive circuits
• DC-DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant during procurement, as the NTB7D3N15MC designation corresponds to the surface-mount D2PAK/TO-263 form factor, whereas the NTP7D3N15MC typically denotes the through-hole TO-220 configuration. Confirm RoHS compliance status and ensure the ordering suffix matches the required lead frame and packaging type to avoid integration errors in assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel solution is required for 150V applications demanding high current handling capabilities. The low on-resistance facilitates efficient power conversion with reduced thermal stress. Ensure the driving circuit can supply sufficient gate voltage to fully enhance the channel and achieve the specified low resistance characteristics under load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the PowerTrench family from onsemi, designed for general-purpose power switching. It represents a silicon-based discrete semiconductor device intended for high-efficiency applications. The series emphasizes reliability through rigorous testing protocols and environmental compliance standards suitable for industrial and commercial electronics manufacturing.

Single FETs, MOSFETs Replacement Considerations

Direct functional equivalents may include other 150V N-channel MOSFETs with comparable Rds(on) and Id ratings. Verify pinout compatibility and thermal resistance specifications before substitution. Cross-reference datasheets to ensure switching speed and gate charge parameters align with existing circuit requirements.