NTTFS2D8N04HLTAG

$1.15

Description：MOSFET N-CH 40V 24A/104A 8WDFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:06cf18be6909 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

NTTFS2D8N04HLTAG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 40V 24A/104A 8WDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTTFS2D8N04HLTAG

Description：MOSFET N-CH 40V 24A/104A 8WDFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.75mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1960 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 63W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-WDFN (3.3x3.3)
Package / Case：8-PowerWDFN

Single FETs, MOSFETs datasheet and documents for NTTFS2D8N04HLTAG

NTTFS2D8N04HLTAG

Single FETs, MOSFETs Overview

The NTTFS2D8N04HLTAG is an N-Channel Power MOSFET utilizing Shielded Gate technology, designed for low on-state resistance and superior switching performance. It features a maximum drain-source voltage of 40 V and continuous drain currents up to 104 A at 25 °C case temperature. The device offers a typical rDS(on) of 2.75 mΩ at VGS = 10 V and 4.3 mΩ at VGS = 4.5 V. Key electrical parameters include a total gate charge (Qg) of 32 nC at 10 V and a reverse recovery time (trr) of 32.2 ns. Packaged in a WDFN8 (3.3x3.3 mm) footprint, it supports junction temperatures from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Shielded Gate MOSFET Technology minimizes on-state resistance while maintaining high switching efficiency.
Optimized soft body diode characteristics reduce switching noise and electromagnetic interference.
Robust package design ensures reliability with MSL1 classification and 100% Unclamped Inductive Load testing.

Single FETs, MOSFETs Applications

Primary DC-DC MOSFET
Synchronous Rectifier in DC-DC and AC-DC converters
Motor Drive systems

Single FETs, MOSFETs Procurement Notes

Verify the complete part number includes the 'TAG' suffix for tape-and-reel packaging configuration. Confirm the device marking '04HL' matches the datasheet specifications. Ensure compatibility with the WDFN8 (CASE 511DY) mechanical outline during PCB layout. Check for RoHS compliance markings as indicated in the ordering information section.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses in compact form factors. The 40 V rating suits low-voltage power conversion stages. Evaluate thermal management requirements based on the 2 °C/W junction-to-case resistance. Consider the 32 nC gate charge for driver capability assessment in high-frequency switching environments.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's Shielded Gate MOSFET family, engineered for enhanced performance in power management applications. The WDFN8 package provides a small footprint suitable for space-constrained designs. It represents a balance between current handling capacity and switching speed for modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet. Verify pinout compatibility and electrical ratings before considering alternative manufacturers.