PBSS302PZ,135

Single Bipolar Transistors Overview

The PBSS302PZ,135 is a PNP low VCEsat transistor manufactured by Nexperia USA Inc. It operates in a SOT223 (SC-73) surface-mount package with four leads. Key electrical parameters include a collector-emitter voltage (VCEO) of -20 V and a continuous collector current (IC) of -5.5 A. The device supports a peak collector current (ICM) of -11 A for single pulses up to 1 ms. Thermal characteristics specify a total power dissipation of 0.7 W on an FR4 PCB with a standard footprint, rising to 2 W with a 6 cm² collector pad. Junction temperature ranges from -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for improved efficiency
• High collector current capability for demanding loads
• High DC current gain at elevated collector currents
• Reduced heat generation compared to conventional transistors

Single Bipolar Transistors Applications

• DC-to-DC conversion circuits
• MOSFET gate driving stages
• Motor control systems
• Charging circuit implementations
• Power switches for motors and fans

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets non-automotive qualification standards as indicated in the datasheet revision history. Ensure design inputs align with the absolute maximum ratings provided in the official Nexperia documentation to prevent device stress or failure during operation.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current handling and low saturation voltage is required. The SOT223 package offers increased heatsinking capabilities compared to smaller packages. Consider the thermal resistance values relative to the intended PCB copper area to ensure adequate power dissipation under load conditions without exceeding junction temperature limits.

Single Bipolar Transistors Part Context

This part belongs to the PBSS series of low VCEsat transistors designed for high-efficiency switching applications. It serves as the PNP complement to the NPN PBSS302NZ within the same family. The device utilizes silicon technology optimized for minimal power loss in saturated states, making it suitable for compact power management designs where thermal performance is critical.

Single Bipolar Transistors Replacement Considerations

The NPN complement PBSS302NZ is documented within the same product family. Verify pinout compatibility and polarity requirements when substituting. No other direct substitute part numbers are confirmed in the provided public documentation.