PBSS4580PA,115

Single Bipolar Transistors Overview

The PBSS4580PA,115 is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia USA Inc. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 5.6 A. The device supports a peak collector current (ICM) of 7 A for single pulses up to 1 ms. Key electrical characteristics include a maximum collector-emitter saturation resistance (RCEsat) of 57 mΩ at IC = 5.6 A and IB = 280 mA, and a transition frequency (fT) of 155 MHz. Total power dissipation reaches 2.1 W on a ceramic PCB. The component operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for high efficiency
• High collector current capability for robust switching
• Exposed heat sink for excellent thermal conductivity
• Leadless ultra-thin SMD package reducing PCB area

Single Bipolar Transistors Applications

• Loadswitch circuits
• Battery-driven devices
• Power management systems
• Charging circuits
• Power switches for motors and fans

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high current handling with minimal voltage drop in a compact form factor. The BISS technology ensures efficient operation suitable for battery-powered applications where power conservation is critical. Ensure adequate thermal management on the PCB footprint to utilize the full 2.1 W power dissipation capability effectively.

Single Bipolar Transistors Part Context

This part belongs to the PBSS4580 series of NPN low VCEsat transistors from Nexperia. It is designed as a replacement for conventional transistors in space-constrained designs. The PNP complement for this device is the PBSS5580PA. The product utilizes the HUSON3 (SOT1061) leadless package to minimize board space while maintaining medium power capabilities.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute: NSS40501UW3T2G (onsemi). Verify pinout compatibility and electrical parameters against the original datasheet before substitution.

Single Bipolar Transistors FAQ

What is the marking code for the PBSS4580PA?

The marking code for the PBSS4580PA is AD.

What is the recommended soldering method for this component?

Reflow soldering is the only recommended soldering method for the PBSS4580PA.

What is the maximum junction temperature for this transistor?

The maximum junction temperature (Tj) for the PBSS4580PA is 150 °C.