Single FETs, MOSFETs PHD21N06LT,118 product image

PHD21N06LT,118

  • Description:MOSFET N-CH 55V 19A DPAK
  • Series:TrenchMOS™
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)

SKU:5459a050445f Category: Brand:

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PHD21N06LT,118 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 55V 19A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PHD21N06LT,118

  • Description:MOSFET N-CH 55V 19A DPAK
  • Series:TrenchMOS™
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:70mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 5 V
  • Vgs (Max):±15V
  • Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):56W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for PHD21N06LT,118

PHD21N06LT,118

Single FETs, MOSFETs Overview

The PHD21N06LT is an N-channel enhancement mode logic level field-effect power transistor utilizing TrenchMOS technology. It operates with a drain-source voltage of 55 V and supports continuous drain currents up to 19 A at 25 °C, increasing to 76 A pulsed. The device features low on-state resistance, specified as ≤ 70 mΩ at VGS = 10 V and ≤ 75 mΩ at VGS = 5 V. Packaged in the SOT428 (DPAK) surface-mount envelope, it includes an integrated body diode and is designed for high-speed switching applications.

Single FETs, MOSFETs Feature Summary

  • Logic level compatibility enabling direct drive from standard digital interfaces
  • TrenchMOS technology providing low on-state resistance and fast switching speeds
  • Integrated body diode supporting synchronous rectification requirements

Single FETs, MOSFETs Applications

  • DC to DC converters
  • Switched mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's current catalog to ensure availability of the SOT428 package variant. Confirm that the component meets the required thermal management specifications for the intended mounting base temperature conditions. Ensure static discharge protection protocols are followed during handling due to the sensitivity of the gate-source input.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with logic-level gate drive capability is required for power conversion circuits. The DPAK package offers a balance between thermal dissipation and surface-mount integration density. Consider the maximum junction temperature rating and thermal resistance values when designing heat sinking solutions for continuous operation scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the N-channel TrenchMOS transistor family originally developed by Philips Semiconductors, now managed by Nexperia following the divestiture of the Standard Product business. The product line emphasizes efficiency and reliability for industrial and computing markets. The PHD21N06LT specifically denotes the surface-mount DPAK version within the broader PHP/PHB/PHD series.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the PHP21N06LT (TO-220AB package) and PHB21N06LT (D2PAK package), which share identical electrical characteristics but differ in physical packaging. Verify pinout compatibility and thermal interface requirements before substituting packages.

PHD21N06LT,118PHD21N06LT,118

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