PMCM6501UNEZ

$0.20

Description：PMCM6501UNE - 20V, N-CHANNEL TRE
Series：*
Mfr：NXP USA Inc.
Package：Bulk

SKU:682bd1827c44 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

PMCM6501UNEZ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is PMCM6501UNE - 20V, N-CHANNEL TRE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PMCM6501UNEZ

Description：PMCM6501UNE - 20V, N-CHANNEL TRE
Series：*
Mfr：NXP USA Inc.
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for PMCM6501UNEZ

PMCM6501UNEZ

Single FETs, MOSFETs Overview

The PMCM6501UNEZ is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It features a 20 V drain-source voltage rating and operates within a gate-source voltage range of -8 V to +8 V. The device supports a continuous drain current of up to 8.7 A at 25 °C, with a typical on-state resistance of 17 mΩ at VGS = 4.5 V. Packaged in a compact 6-bump WLCSP measuring 0.98 × 1.48 × 0.35 mm, it offers ESD protection exceeding 2 kV HBM and a junction temperature range from -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes Trench MOSFET technology for enhanced performance
Features ultra-small 6-bump Wafer Level Chip-Size Package (WLCSP)
Provides ElectroStatic Discharge (ESD) protection greater than 2 kV HBM
Designed with low threshold voltage characteristics

Single FETs, MOSFETs Applications

Relay driver circuits
High-speed line drivers
Low-side load switches
General switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and reel configuration. Ensure compatibility with standard reflow soldering profiles for WLCSP packages. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into production designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current density in minimal footprint areas. Evaluate thermal resistance values based on specific PCB copper area and layer count. Consider the low threshold voltage for efficient drive capability in low-voltage logic interfaces.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for space-constrained electronics. The WLCSP packaging allows for direct wafer-level processing, reducing assembly steps compared to traditional surface-mount packages while maintaining robust electrical performance.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other N-channel MOSFETs in the same voltage class if pinout or package dimensions differ. Verify that substitute devices meet or exceed the required drain current and on-state resistance specifications for the intended application.