PMR780SN,115

Single FETs, MOSFETs Overview

The PMR780SN is an N-channel enhancement mode field-effect transistor utilizing μTrenchMOS technology. It features a drain-source voltage rating of 60 V and a continuous drain current capability of 0.55 A at 25 °C. The device exhibits a maximum on-state resistance of 920 mΩ at VGS = 10 V and ID = 0.3 A. Total power dissipation is rated at 0.53 W. The component is housed in a plastic surface-mounted SOT416 (SC-75) package with three leads.

Single FETs, MOSFETs Feature Summary

• Low on-state resistance for reduced conduction losses
• Fast switching characteristics suitable for high-frequency applications
• Compact footprint significantly smaller than SOT23 packages

Single FETs, MOSFETs Applications

• Driver circuits
• Switching in portable appliances

Single FETs, MOSFETs Procurement Notes

Verify the current product status before design finalization, as datasheet information may reflect historical production phases. Confirm that the specific ordering suffix matches the required tape and reel configuration for automated assembly processes. Ensure compliance with RoHS directives applicable to the manufacturing region. Cross-reference the latest Nexperia documentation to validate any changes to pinning or thermal characteristics prior to PCB layout completion.

Single FETs, MOSFETs Selection Notes

Select this component for low-power switching tasks requiring minimal PCB area. The μTrenchMOS technology provides efficient performance within standard logic levels. Evaluate thermal management requirements against the specified junction-to-solder point thermal resistance. Consider the gate charge parameters when designing drive circuits for optimal switching speed and efficiency.

Single FETs, MOSFETs Part Context

This device belongs to the N-channel FET family produced under the former NXP Standard Product business, now operating as Nexperia. It utilizes TrenchMOS technology for improved performance over planar structures. The product data sheet originates from Philips Semiconductors, reflecting the corporate transition history documented in the manufacturer's notices.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia databases for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity or generic specifications. Verify all electrical parameters against the target application requirements before substitution.