PMV65XP,215

Single FETs, MOSFETs Overview

The PMV65XP,215 is a single P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in a TO-236AB (SOT23) surface-mounted plastic package with three leads. The device features a drain-source voltage rating of -20 V and a gate-source voltage limit of ±12 V. At 25 °C, the typical drain-source on-state resistance is 58 mΩ at a gate-source voltage of -4.5 V and a drain current of -2.8 A. The total gate charge is typically 7.7 nC. The component supports a junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Low threshold voltage for efficient logic-level control
• Low on-state resistance achieved through Trench MOSFET technology

Single FETs, MOSFETs Applications

• Low power DC-to-DC converters
• Load switching circuits
• Battery management systems
• Battery powered portable equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact P-channel switch with low on-resistance in small form factors. Ensure the application operates within the -20 V drain-source voltage limit and respects the thermal dissipation constraints defined by the junction-to-ambient resistance. Confirm that the gate drive voltage aligns with the specified threshold characteristics for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's portfolio of discrete field-effect transistors utilizing silicon Trench technology. It is designed for general-purpose switching applications where space efficiency and low conduction losses are prioritized. The SOT23 package provides a standardized footprint compatible with automated surface-mount assembly processes commonly used in consumer electronics manufacturing.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing requires matching channel type, voltage ratings, package outline, and electrical characteristics to ensure functional compatibility without design modification.