PSMN2R8-40YSDX

Single FETs, MOSFETs Overview

The Nexperia PSMN2R8-40YSD is an N-channel enhancement mode MOSFET utilizing NextPower-S3 Schottky-Plus technology. It features a 40 V drain-source voltage rating and a maximum continuous drain current of 160 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 2.4 mΩ at 25 °C, rising to 5.4 mΩ at 175 °C. Total gate charge is typically 44 nC at 10 V. The component operates within a junction temperature range of -55 °C to 175 °C and provides a total power dissipation capacity of 147 W.

Single FETs, MOSFETs Feature Summary

• NextPower-S3 technology enables superfast switching with soft body-diode recovery for high system efficiency.
• Schottky-Plus body-diode design delivers low forward voltage, low reverse recovery charge, and minimal leakage current.
• Avalanche rated with 100% testing at IAS = 150 A to ensure robustness against inductive load switching.
• LFPAK56 package construction utilizes copper-clip and solder die attach for superior thermal performance.

Single FETs, MOSFETs Applications

• High-performance synchronous rectification
• DC-to-DC converters
• Brushless DC motor control
• Battery protection circuits
• Load-switch and eFuse implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel packaging configuration before finalizing procurement orders. Confirm that the requested quantity aligns with standard manufacturing reel sizes to avoid partial reel handling issues. Ensure all technical specifications meet the target application's thermal and electrical requirements prior to purchase.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring low conduction losses and fast switching speeds under standard gate drive conditions. Evaluate PCB copper area and thermal management strategies, as practical current limits are often dictated by board layout rather than the semiconductor die itself. Consider the avalanche energy rating if the application involves significant inductive switching loads.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's NextPower-S3 family of N-channel MOSFETs designed for high-efficiency power conversion. It employs advanced TrenchMOS Superjunction technology to achieve low on-resistance and optimized dynamic characteristics. The LFPAK56 (SOT669) package provides a compact surface-mount solution suitable for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Nexperia parts sharing the same pinout and package dimensions. Verify that any substitute maintains or exceeds the 40 V breakdown voltage and 160 A current capabilities. Ensure the replacement device supports the required 175 °C operating temperature and compatible gate drive thresholds.

Single FETs, MOSFETs FAQ

Is the PSMN2R8-40YSD automotive qualified?

No, unless explicitly stated otherwise in the data sheet, this product is not suitable for automotive use and has not been tested according to automotive standards.

What is the peak pulsed drain current capability?

The device supports a peak pulsed drain current of 658 A for pulses up to 10 µs at a mounting base temperature of 25 °C.

How does the package support visual inspection?

The exposed leads of the LFPAK56 package allow for wave soldering and facilitate visual solder joint inspection to ensure high-quality connections.