PSMN3R3-80ES,127

Single FETs, MOSFETs Overview

The PSMN3R3-80ES,127 is an N-channel enhancement mode MOSFET manufactured by Nexperia. It features a maximum drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 120 A at case temperature. The device is housed in an I2PAK through-hole package with three pins. Key electrical parameters include a maximum on-resistance (Rds(on)) of 3.3 mΩ, a typical gate charge (Qg) of unspecified value at standard test conditions, and a maximum power dissipation (Pd) of 338 W at case temperature. Operating temperatures range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• High current handling capability suitable for power switching applications
• Low on-state resistance for improved efficiency
• Robust thermal performance via through-hole mounting

Single FETs, MOSFETs Applications

• Motor control systems
• Power supply units
• Industrial automation

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '127' corresponds to the I2PAK package variant when sourcing. Confirm RoHS compliance status as indicated in official documentation. Ensure thermal management solutions match the 338 W dissipation rating under actual operating conditions. Cross-reference pinout diagrams to prevent installation errors in existing designs.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current capacity within an 80 V voltage window. The through-hole I2PAK package facilitates easier assembly and superior heat dissipation compared to surface-mount alternatives. Evaluate thermal resistance values against the system's cooling capabilities to ensure reliable operation under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's 80 V N-channel MOSFET portfolio, designed for general-purpose power switching. The I2PAK packaging distinguishes it from surface-mount variants like the SOT-669 series, offering different mechanical integration options. It serves as a discrete solution for medium-to-high power applications where robustness and thermal stability are critical design factors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 80 V, 120 A N-channel MOSFETs in I2PAK packages from compatible manufacturers. Verify pin compatibility and thermal characteristics before substitution. No specific alternative part numbers are confirmed in public documentation.