PSMQE093N10NS2_R2_00601

Single FETs, MOSFETs Overview

The PSMQE093N10NS2_R2_00601 is a single N-Channel enhancement mode MOSFET manufactured by Panjit using silicon technology. It features a DFN3333S-8L surface-mount package and operates within a temperature range of -55°C to +175°C. Key electrical parameters include a drain-source breakdown voltage (Vds) of 100 V, a continuous drain current (Id) of 54 A, and a maximum gate-source voltage (Vgs) of 20 V. The device exhibits a low on-resistance (Rds(on)) of 9.5 mOhms, a gate charge (Qg) of 15.7 nC, and a power dissipation rating of 60 W.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced shield gate trench technology to achieve excellent figure of merit through minimized on-resistance and optimized switching characteristics.
• Engineered for high thermal performance with an extended maximum junction temperature rating of 175°C suitable for demanding environments.

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management systems
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official manufacturer documentation to ensure correct configuration. Confirm RoHS compliance status and specific packaging details directly with the supplier or authorized distributor prior to ordering. Ensure design specifications align with the absolute maximum ratings defined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-Channel MOSFET with low conduction losses and high switching speed is required. The DFN3333S-8L package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management requirements based on the 60W power dissipation rating and operating temperature limits.

Single FETs, MOSFETs Part Context

This component belongs to the PSM series of MOSFETs from Panjit, which are designed for general-purpose power switching applications. The series emphasizes efficiency and reliability through proprietary trench process technologies. This specific model targets applications requiring robust performance at 100V voltage levels.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully before replacing components in existing designs.