R6502END3TL1

Single FETs, MOSFETs Overview

The R6502END3TL1 is a single N-channel Power MOSFET from ROHM Semiconductor, utilizing Super Junction technology in a TO-252 (DPAK) surface-mount package. It features a drain-source breakdown voltage of 650 V and a continuous drain current of 1.7 A at case temperature. The device exhibits a typical on-resistance of 4 Ohms at a gate-source voltage of 10 V. Designed for low-noise performance, it supports a maximum power dissipation of 26 W at case temperature and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Super Junction structure engineered for low-noise operation in sensitive applications
• High-voltage capability with 650 V drain-source breakdown rating
• Surface-mount TO-252 package optimized for thermal management

Single FETs, MOSFETs Applications

• Audio equipment requiring low electrical noise
• Lighting systems sensitive to electromagnetic interference
• General-purpose power supply circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TL1 indicates tape-and-reel packaging when sourcing components. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the procurement channel provides authentic ROHM Semiconductor products to guarantee reliability and adherence to specified electrical characteristics.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage switching with minimal noise generation. The TO-252 package facilitates efficient heat dissipation for moderate power levels. Evaluate thermal resistance requirements against the 26 W case temperature dissipation limit to ensure stable operation under load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the R6xxxENx series of low-noise Super Junction MOSFETs. The series is characterized by reduced switching noise, making it suitable for audio and lighting applications where signal integrity is critical. It represents a specialized variant within ROHM's broader power transistor portfolio.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter alignment before replacing the component in existing designs.