RH6E040BGTB1

$1.39

Description：NCH 30V 125A, HSMT8, POWER MOSFE
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c17c7358300c Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

RH6E040BGTB1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is NCH 30V 125A, HSMT8, POWER MOSFE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RH6E040BGTB1

Description：NCH 30V 125A, HSMT8, POWER MOSFE
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 78W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-HSMT (3.2x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for RH6E040BGTB1

RH6E040BGTB1

Single FETs, MOSFETs Overview

The RH6E040BGTB1 is an N-channel power MOSFET from ROHM Semiconductor, housed in a compact HSMT8 surface-mount package. It features a drain-source voltage (VDSS) of 30V and supports a continuous drain current (ID) of up to 125A at the silicon limit. The device achieves a low static on-state resistance (RDS(on)) with a maximum value of 2.9mΩ at VGS=10V and 4.6mΩ at VGS=4.5V. With a total gate charge (Qg) of 30nC at VGS=10V and 14nC at VGS=4.5V, it facilitates efficient switching. The component offers a power dissipation rating of 78W and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance for high efficiency
High power density in small mold HSMT8 package
Pb-free plating compliant with RoHS standards
Halogen-free construction

Single FETs, MOSFETs Applications

Switching circuits
Motor drives
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TB1 corresponds to the required tape-and-reel packaging configuration before procurement. Confirm that the standard-grade classification aligns with project requirements, as this product is not recommended for automotive equipment applications. Ensure design margins account for the specified thermal resistance values under actual mounting conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-channel MOSFET with high current handling capability is required in a minimal footprint. The HSMT8 package provides a balance between thermal performance and board space constraints. Consider the drive voltage requirements, as RDS(on) varies significantly between 4.5V and 10V gate drive levels. Evaluate the thermal management strategy based on the provided junction-to-case and junction-to-ambient thermal resistance data.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's series of low on-resistance power MOSFETs designed for general-purpose electronic equipment. The RH6E040BG variant utilizes the HSMT8 package code, which is distinct from other packages like HSOP8 or TO-252 found in similar voltage classes. It is intended for use in ordinary electronic equipment such as AV, OA, and home appliances, rather than specialized automotive or medical sectors.