SI2333DS-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI2333DS-T1-E3 is a P-Channel MOSFET utilizing TrenchFET technology, housed in an SMD TO-236 (SOT-23) package. It features a Drain-Source Voltage of -12 V and a continuous Drain Current of -5.3 A at 25 °C. The device exhibits a maximum On-State Drain Resistance of 0.032 Ω at VGS = -4.5 V. Operating junction temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• TrenchFET Power MOSFET technology for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21 standards
• Lead-free packaging available in specific ordering suffixes

Single FETs, MOSFETs Applications

• Load Switch
• PA Switch

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix when purchasing. The -T1-E3 variant denotes lead-free components, while the -GE3 suffix indicates both lead-free and halogen-free compliance. Confirm package type and environmental specifications against project requirements before procurement to ensure alignment with manufacturing constraints.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring high current handling within a compact surface-mount footprint. Evaluate thermal resistance ratings and power dissipation limits relative to the intended PCB layout and ambient operating conditions to ensure reliable operation under steady-state and pulsed loads.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si2333DS series of single P-Channel MOSFETs. Manufactured using silicon technology, it is designed for general-purpose switching applications where low on-resistance and fast switching speeds are required in space-constrained environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified cross-reference data. Ensure any substitute maintains identical pinout configuration, voltage ratings, and thermal characteristics to prevent circuit incompatibility.