SI4654DY-T1-GE3

$1.22

Description：MOSFET N-CH 25V 28.6A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6d8cf14d0ce3 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4654DY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 25V 28.6A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4654DY-T1-GE3

Description：MOSFET N-CH 25V 28.6A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：28.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：3770 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 5.9W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4654DY-T1-GE3

SI4654DY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4654DY-T1-GE3 is an N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a drain-source voltage of 25 V and a continuous drain current of 28 A at 25 °C case temperature. The device offers a maximum on-state resistance of 5.2 mΩ at VGS = 4.5 V and 4 mΩ at VGS = 10 V. Total gate charge is typically 63 nC at VGS = 10 V. It is housed in a surface-mount SO-8 package with 8 pins.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET power MOSFET technology for optimized performance
Guaranteed 100% UIS (Unclamped Inductive Switching) testing
Manufactured to be halogen-free according to IEC 61249-2-21 standards

Single FETs, MOSFETs Applications

Synchronous buck low-side switching for notebook computers
Synchronous buck low-side switching for game consoles
Synchronous rectifier point-of-load (POL) applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The -T1 suffix indicates tape and reel packaging, while -E3 denotes lead-free composition. The -GE3 variant confirms compliance with both lead-free and halogen-free requirements per IEC 61249-2-21. Confirm package type and environmental compliance directly with the manufacturer or authorized distributors before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage synchronous rectification where high current handling is required. The SO-8 package provides a balance between thermal dissipation and board space efficiency. Ensure the application operates within the specified 25 V drain-source voltage limit and consider the thermal resistance characteristics for adequate heat management under steady-state conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si4654DY series of N-channel MOSFETs. It is designed specifically for low-voltage, high-current DC-to-DC conversion applications. The device integrates advanced trench gate technology to minimize conduction losses while maintaining robust switching capabilities suitable for portable electronic devices.