SI4864DY-T1-E3

$1.62

Description：MOSFET N-CH 20V 17A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:c8a41077b153 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4864DY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 17A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4864DY-T1-E3

Description：MOSFET N-CH 20V 17A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：3.5mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4864DY-T1-E3

SI4864DY-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4864DY-T1-E3 is a lead-free N-channel MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and a continuous drain current of 25 A at 25 °C, reducing to 17 A at 150 °C junction temperature. The device offers a low on-state resistance of 3.5 mΩ at VGS = 4.5 V and 4.7 mΩ at VGS = 2.5 V. Packaged in an SO-8 surface-mount housing, it supports a maximum power dissipation of 3.5 W at 25 °C ambient temperature.

Single FETs, MOSFETs Feature Summary

TrenchFET Power MOSFET architecture optimized for low gate charge and fast switching performance
Lead-free construction compliant with IEC 61249-2-21 halogen-free standards
Enhanced thermal management via low junction-to-foot thermal resistance

Single FETs, MOSFETs Applications

Low-side MOSFET implementation in synchronous buck DC/DC converters
Power regulation circuits within server infrastructure
Voltage conversion stages in router hardware

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when sourcing components. The -E3 designation indicates a lead-free finish, while the -GE3 variant additionally confirms halogen-free compliance according to IEC 61249-2-21. Confirm package availability matches the required reel or cut tape specifications for your assembly line. Ensure the component meets RoHS directives for your target market before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in a compact SO-8 footprint. The low RDS(on) values support efficient power conversion at both 4.5 V and 2.5 V gate drive levels. Evaluate the thermal constraints carefully, as the maximum power dissipation decreases significantly as ambient temperature rises above 25 °C. Ensure the gate drive circuitry can supply the necessary total gate charge for optimal PWM performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI4 series of TrenchFET Power MOSFETs. These devices are engineered specifically for low-voltage, high-current switching applications. The SO-8 package provides a robust surface-mount solution suitable for automated PCB assembly processes commonly used in consumer electronics and industrial power supplies.