SI5441BDC-T1-GE3

$1.46

Description：MOSFET P-CH 20V 4.4A 1206-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ad60436e4094 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI5441BDC-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 4.4A 1206-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI5441BDC-T1-GE3

Description：MOSFET P-CH 20V 4.4A 1206-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：45mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：1206-8 ChipFET™
Package / Case：8-SMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for SI5441BDC-T1-GE3

SI5441BDC-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI5441BDC-T1-GE3 is a P-channel MOSFET utilizing TrenchFET technology, housed in a leadless 1206-8 ChipFET package. It features a drain-source voltage of -20 V and a continuous drain current of -6.1 A at 25 °C. The device exhibits an on-state resistance of 0.045 Ω at VGS = -4.5 V and 0.080 Ω at VGS = -2.5 V. Total gate charge is typically 11.5 nC. Thermal resistance from junction to ambient is 95 °C/W steady state, while junction-to-foot resistance is 20 °C/W maximum.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture for optimized performance
Leadless 1206-8 ChipFET package design with enhanced thermal dissipation
Halogen-free construction compliant with IEC 61249-2-21

Single FETs, MOSFETs Applications

Power management circuits requiring low on-resistance
Battery protection systems
Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 to confirm halogen-free status. Confirm package type matches the 1206-8 ChipFET outline. Ensure thermal pad patterns align with recommended copper spreading for optimal heat dissipation. Validate that operating conditions remain within absolute maximum ratings.

Single FETs, MOSFETs Selection Notes

Select this component for designs needing a compact P-channel solution with high current capability relative to its footprint. Consider the thermal resistance characteristics when designing PCB layouts. Verify gate drive voltages against specified thresholds for desired on-state resistance levels.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si5441BDC series of single-channel P-channel MOSFETs. It utilizes advanced TrenchFET technology to achieve low on-resistance within a small surface-mount form factor. The product line emphasizes thermal efficiency and reliability for modern electronic applications.