SI7172ADP-T1-RE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7172ADP-T1-RE3 is a single N-channel MOSFET utilizing ThunderFET technology, housed in a leadless PowerPAK SO-8 package. It features a drain-source voltage rating of 200 V and a continuous drain current of 17.2 A at TC = 25 °C. The device offers a maximum on-state resistance of 0.070 Ω at VGS = 10 V and 0.080 Ω at VGS = 7.5 V. Key dynamic parameters include a typical total gate charge of 19.5 nC and a forward transconductance of 26 S. It supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• ThunderFET technology optimizes the balance between RDS(on), Qg, Qsw, and Qoss
• 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
• Leadless PowerPAK SO-8 package with exposed copper bottom side

Single FETs, MOSFETs Applications

• Fixed telecom systems
• DC/DC converters
• Primary and secondary side switching
• Synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm compliance status via Vishay documentation links provided in the source material. Ensure ordering suffixes match required packaging formats. Validate thermal performance requirements against absolute maximum ratings before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring optimized switching efficiency. The ThunderFET architecture provides a favorable trade-off between conduction losses and switching energy. Consider the 200 V breakdown voltage for robust operation in demanding power environments. Evaluate thermal management needs based on the specified junction-to-case resistance values.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix ThunderFET family, designed for high-performance power switching. It utilizes silicon technology within a compact surface-mount package. The product line emphasizes reliability through rigorous testing protocols, including UIS validation. It serves as a specialized solution for modern power conversion topologies.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Cross-referencing should be performed using specific electrical parameters such as VDS, RDS(on), and package dimensions. Do not assume functional equivalence without validating all critical specifications against the target application requirements.