SIA483ADJ-T1-GE3

$0.46

Description：MOSFET P-CH 30V 10.6A/12A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e272053712df Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIA483ADJ-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 10.6A/12A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIA483ADJ-T1-GE3

Description：MOSFET P-CH 30V 10.6A/12A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
Vgs (Max)：+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.4W (Ta), 17.9W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SC-70-6
Package / Case：PowerPAK® SC-70-6

Single FETs, MOSFETs datasheet and documents for SIA483ADJ-T1-GE3

SIA483ADJ-T1-GE3

Single FETs, MOSFETs Overview

The SIA483ADJ-T1-GE3 is a P-channel power MOSFET utilizing TrenchFET Gen IV technology. It features a PowerPAK SC-70 package with a drain-source voltage of -30 V and a continuous drain current of -12 A at TC = 25 °C. The maximum on-state resistance is 0.020 Ω at VGS = -10 V and 0.033 Ω at VGS = -4.5 V. Typical gate charge is 8.3 nC at VGS = -4.5 V, supporting efficient switching performance.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV p-channel architecture
Thermally enhanced PowerPAK SC-70 leadless package
Optimized RDS(on)-Qg figure-of-merit for switching applications

Single FETs, MOSFETs Applications

Battery charging and management systems
Load switch circuits
DC/DC converters
Power management in mobile and wearable devices

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to ensure compliance with lead-free and halogen-free material requirements. Confirm that the component matches the exact Vishay Siliconix part number for design integration. Validate datasheet revisions against the latest official documentation before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring high efficiency in compact form factors. Evaluate thermal constraints based on junction-to-ambient resistance values under specific PCB mounting conditions. Ensure gate drive voltages align with specified thresholds for optimal on-state resistance performance.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix SiA483 series of P-channel MOSFETs. It utilizes advanced trench technology to deliver superior electrical characteristics within a miniature surface-mount footprint designed for space-constrained portable electronics.