SIHFBC40AS-GE3

$2.13

Description：MOSFET N-CHANNEL 600V
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:3bd1ef105ed0 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHFBC40AS-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CHANNEL 600V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHFBC40AS-GE3

Description：MOSFET N-CHANNEL 600V
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1036 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for SIHFBC40AS-GE3

SIHFBC40AS-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHFBC40AS-GE3 is a lead-free, halogen-free N-channel Power MOSFET housed in a D2PAK (TO-263) package. It features a drain-source voltage of 600 V and a continuous drain current of 6.2 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 1.2 Ω at VGS = 10 V. Key dynamic parameters include a total gate charge of 42 nC, gate-source charge of 10 nC, and gate-drain charge of 20 nC. It supports a peak diode recovery dV/dt of 6.0 V/ns and operates within a junction temperature range of -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

Low gate charge for simplified drive requirements
Enhanced ruggedness regarding gate, avalanche, and dynamic dV/dt performance
Fully characterized capacitance and avalanche voltage/current specifications

Single FETs, MOSFETs Applications

Switch mode power supply (SMPS)
Uninterruptible power supply
High speed power switching

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix GE3 confirms lead-free and halogen-free compliance status before procurement. Confirm that the D2PAK (TO-263) package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-case thermal resistance ratings under expected operating loads.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability near 600 V is required alongside moderate current handling. The low gate charge characteristic makes it suitable for applications prioritizing efficient driver design. Verify that the single-pulse avalanche energy limits meet the circuit's transient requirements.

Single FETs, MOSFETs Part Context

This part belongs to the IRFBC40AS/SiHFBC40AS family from Vishay Siliconix. It represents the silicon variant of the product line, distinguished by its specific thermal and electrical characteristics compared to other series members. The datasheet provides comprehensive static and dynamic testing data for circuit simulation and validation.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with IRFBC40ASPbF for leaded alternatives. Verify pinout compatibility and absolute maximum ratings match before substituting any other N-channel MOSFETs in existing designs.