SIR1309DP-T1-GE3

$0.68

Description：P-CHANNEL 30 V (D-S) MOSFET POWE
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a2616d8ea871 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIR1309DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is P-CHANNEL 30 V (D-S) MOSFET POWE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIR1309DP-T1-GE3

Description：P-CHANNEL 30 V (D-S) MOSFET POWE
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：19.1A (Ta), 65.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：3250 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：4.8W (Ta), 56.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIR1309DP-T1-GE3

SIR1309DP-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiR1309DP is a P-Channel power MOSFET utilizing TrenchFET Gen IV technology. It features a -30 V drain-source voltage and a maximum on-state resistance of 7.3 mΩ at VGS = -10 V. The device supports a continuous drain current of -65.7 A at TC = 25 °C and dissipates up to 56.8 W under the same conditions. Packaged in a leadless PowerPAK SO-8, it operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV p-channel architecture for optimized performance
100% gate resistance and unclamped inductive switching (UIS) tested
Leadless PowerPAK SO-8 package design for efficient thermal management

Single FETs, MOSFETs Applications

Adapter switch
Load switch
Motor drive control
Battery management

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number with official datasheet documentation. Confirm that the ordering suffix matches the specified lead-free and halogen-free configuration. Ensure all technical parameters align with the required application specifications before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component based on its specific -30 V rating and low on-resistance characteristics suitable for high-current applications. Evaluate the thermal requirements against the provided junction-to-case resistance values. Consider the single-channel configuration and PowerPAK SO-8 footprint when designing the printed circuit board layout.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix TrenchFET family, designed for general-purpose power switching applications. It represents an evolution in silicon-based MOSFET technology, focusing on reducing conduction losses while maintaining robust reliability standards across various industrial and consumer electronic environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume compatibility with other manufacturers' devices without validating pinout, electrical ratings, and thermal characteristics against the original specifications.