SIR870BDP-T1-RE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIR870BDP-T1-RE3 is a single N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 100 V drain-source voltage rating and an 81 A continuous drain current capacity at 25 °C case temperature. The device offers a maximum on-resistance of 6.1 mΩ at VGS = 10 V and 7.7 mΩ at VGS = 4.5 V. Total gate charge is typically 73 nC at VGS = 10 V. It is housed in a leadless PowerPAK SO-8 package with exposed copper terminals for optimized thermal performance.

Single FETs, MOSFETs Feature Summary

• TrenchFET Gen IV power MOSFET architecture
• Optimized low RDS(on) x Qg figure-of-merit
• Tuned for lowest RDS(on) x Qoss figure-of-merit
• 100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

• Synchronous rectification
• Primary side switch
• DC/DC converters
• Power supplies
• Motor drive control
• Battery and load switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance requirements. The -T1-RE3 designation indicates a lead-free, halogen-free product supplied in tape and reel packaging. Confirm that the application design accounts for the exposed copper terminal nature of the PowerPAK SO-8 package, which requires appropriate soldering profile adherence to ensure reliable interconnection without relying on plated tip fillets.

Single FETs, MOSFETs Selection Notes

Select this component when a high-current N-channel switch with low conduction losses is required in a compact surface-mount footprint. The device supports both standard 10 V and lower 4.5 V gate drive voltages, offering flexibility for various logic-level interfaces. Ensure the thermal management strategy accommodates the junction-to-case thermal resistance ratings provided in the datasheet for steady-state and transient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the SiR series of N-channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK SO-8 single configuration, designed for high-power density applications. The device integrates advanced trench technology to minimize switching and conduction losses compared to previous generations.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Vishay PowerPAK SO-8 N-channel MOSFETs sharing similar VDS and RDS(on) specifications. Verify pinout compatibility and thermal resistance characteristics before substitution.