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SPI07N60S5HKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 7.3A TO262-3. Review the specifications below when checking this part for your BOM.
The SPI07N60S5 is a CoolMOS Power Transistor with a 600 V drain-source voltage and a maximum on-state resistance of 0.6 Ω at 25 °C. It features a continuous drain current of 7.3 A at 25 °C and a pulsed drain current of 14.6 A. The device utilizes PG-TO262 packaging and operates within a junction temperature range of -55 to +150 °C. Key electrical parameters include a gate charge of 27 nC, an avalanche energy rating of 230 mJ for single pulses, and a dv/dt rating of 20 V/ns.
Verify the specific ordering code Q67040-S4328 matches the required PG-TO262 package configuration. Confirm that the component meets all relevant safety standards and RoHS compliance requirements for the intended deployment environment before finalizing procurement orders.
Select this component when low on-state resistance and high breakdown voltage are critical. Consider its periodic avalanche rating for designs requiring resilience against inductive load switching. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values.
This part belongs to Infineon's CoolMOS family, utilizing advanced trench technology to achieve superior performance compared to standard planar MOSFETs. The SPI variant specifically denotes surface-mount packaging suitable for automated assembly processes in compact electronic designs.
The SPP07N60S5 serves as the through-hole equivalent with identical electrical characteristics but utilizes PG-TO220 packaging instead of PG-TO262.
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