STL33N60DM6

$4.64

Description：MOSFET N-CH 600V 21A PWRFLAT HV
Series：MDmesh™ M6
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3808235cd2f0 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STL33N60DM6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 21A PWRFLAT HV. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STL33N60DM6

Description：MOSFET N-CH 600V 21A PWRFLAT HV
Series：MDmesh™ M6
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：140mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id：4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerFlat™ (8x8) HV
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for STL33N60DM6

STL33N60DM6

Single FETs, MOSFETs Overview

The STL33N60DM6 is an N-channel Power MOSFET from the MDmesh DM6 series, housed in a PowerFLAT 8x8 HV package. It features a drain-source breakdown voltage of 600 V and a maximum on-resistance of 140 mΩ at VGS = 10 V. The device supports a continuous drain current of 21 A at 25 °C case temperature and handles pulsed currents up to 80 A. Key electrical parameters include a gate threshold voltage ranging from 3.25 V to 4.75 V, total gate charge of 35 nC, and input capacitance of 1500 pF. Thermal resistance from junction to case is 0.83 °C/W.

Single FETs, MOSFETs Feature Summary

Fast-recovery body diode with low reverse recovery charge and time
Extremely high dv/dt ruggedness rated at 100 V/ns
Integrated Zener protection for gate-source robustness
100% avalanche tested for enhanced reliability

Single FETs, MOSFETs Applications

High-efficiency bridge topologies
ZVS phase-shift converters
General switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code STL33N60DM6 against the manufacturer's official datasheet DS12985 Rev 3 to confirm technical specifications and package details. Ensure compatibility with the PowerFLAT 8x8 HV footprint and tape-and-reel packing format during integration. Cross-reference absolute maximum ratings and thermal data with system requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with compact surface-mount packaging. The MDmesh DM6 technology offers improved RDS(on) per area compared to previous generations. Consider the 140 mΩ maximum on-resistance and 21 A continuous current rating when sizing thermal management solutions for the intended operating environment.

Single FETs, MOSFETs Part Context

This device belongs to the MDmesh DM6 fast-recovery diode series by STMicroelectronics. It utilizes super-junction technology to combine low recovery charge with effective switching behavior. The PowerFLAT 8x8 HV package provides a thermally efficient and space-saving solution suitable for high-power density applications.