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TK16A60W5,S4VX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 600V 15.8A TO220SIS. Review the specifications below when checking this part for your BOM.
The TK16A60W5,S4VX is an N-channel enhancement mode MOSFET from Toshiba's DTMOSIV series, designed for high-voltage switching applications. It features a 600V drain-source voltage rating and a continuous drain current of 16A at 25°C ambient temperature. The device utilizes a Super Junction structure to achieve low on-resistance, specified as a maximum of 300mΩ at Vgs=10V and Id=8A. Key electrical characteristics include a gate threshold voltage range of 3V to 4.5V and a typical reverse recovery time of 100ns. Packaged in a TO-220SIS through-hole housing, it supports junction temperatures up to 150°C.
Verify the specific suffix S4VX against the manufacturer's official datasheet to confirm packaging details and marking codes. Ensure the component matches the DTMOSIV series specifications for voltage and current ratings before integration into designs requiring 600V isolation.
Select this component for applications requiring 600V blocking capability with moderate current handling around 16A. The TO-220SIS package facilitates through-hole mounting for robust mechanical connections. Consider the 300mΩ on-resistance for thermal management calculations in power conversion topologies.
This part belongs to the TK16A60W family within Toshiba's DTMOSIV lineup. These devices are silicon N-channel MOSFETs optimized for general-purpose high-voltage switching. The series emphasizes reliability and low conduction losses compared to conventional planar structures.
Compatible substitutes include the TK16A60W5,S5X variant, which shares identical electrical characteristics but may differ in packaging or reel configuration. Verify pinout compatibility and thermal resistance values when cross-referencing with other manufacturers' 600V TO-220 MOSFETs.
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