TP5335K1-G-VAO

Single FETs, MOSFETs Overview

The TP5335K1-G-VAO is a single N-channel depletion mode MOSFET manufactured by Microchip Technology. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 350 V and a continuous drain current of 72 mA. Its on-resistance is specified at 35 Ohms, with a gate-source voltage range of -20 V to +20 V. The threshold voltage is typically 3.5 V, and power dissipation reaches 360 mW. Operating temperatures span from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation for normally-on functionality
• High voltage capability suitable for robust switching applications
• Compact SMD/SMT packaging for space-constrained designs

Single FETs, MOSFETs Applications

• High-voltage switching circuits
• Power management systems requiring normally-on logic
• Industrial control interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm exact ordering and marking details. Ensure compatibility with standard SOT-23-3 footprints during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before final procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel configuration is required within a compact footprint. The high breakdown voltage supports demanding electrical environments. Evaluate thermal constraints carefully due to the low power dissipation rating inherent to the small package size.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's discrete semiconductor portfolio, specifically within the MOSFET category. It serves as a specialized switching element designed for applications where depletion mode behavior is advantageous over standard enhancement modes.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified equivalents. Generic replacements may not match the specific depletion mode characteristics or voltage ratings.