TPC6111(TE85L,F,M)

Single FETs, MOSFETs Overview

The Toshiba TPC6111(TE85L,F,M) is a low-voltage N-channel Power MOSFET belonging to the VS-6 series. It features a U-MOS structure for high channel density and low ON-resistance. The device is housed in a compact S-Mini surface-mount package, suitable for space-constrained designs. Key electrical characteristics include a drain-source breakdown voltage of 20 V and a continuous drain current rating of 4.5 A. The maximum on-state resistance is specified at 0.04 ohms.

Single FETs, MOSFETs Feature Summary

• U-MOS trench structure provides superior switching speed and frequency characteristics compared to conventional double-diffusion types.
• Low on-state resistance minimizes power consumption and heat generation during operation.
• Compact S-Mini package reduces mounting area for high-density circuit board layouts.

Single FETs, MOSFETs Applications

• Synchronous rectification in DC-DC converters
• Motor driver power circuits
• Battery protection circuits for portable devices

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official part numbering scheme to confirm package type and tape/reel specifications. Ensure the component matches the required voltage and current ratings for the target application. Confirm RoHS compliance status through the latest datasheet documentation before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low voltage drive and high efficiency in small form factors. The U-MOS technology offers improved ruggedness and simplified absorber circuits due to guaranteed avalanche capability. Consider thermal management requirements based on the specific power dissipation limits of the S-Mini package.

Single FETs, MOSFETs Part Context

This device is part of Toshiba's Low-V DSS MOSFET portfolio, specifically the VS-6 series designed for small SMD packages. It utilizes the U-MOS structure, which achieves lower ON-resistance than standard planar MOSFETs by connecting channels vertically. This series targets ultra-high-density applications in consumer electronics and portable equipment.

Single FETs, MOSFETs Replacement Considerations

Consult the official Toshiba product guide for confirmed substitute part numbers within the same series or family. Verify that any replacement maintains identical pinout configuration, voltage ratings, and package dimensions to ensure compatibility with existing PCB footprints.