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TSM2N7000KCT A3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CHANNEL 60V 300MA TO92. Review the specifications below when checking this part for your BOM.
The TSM2N7000KCT A3G is an N-Channel enhancement mode MOSFET manufactured by Taiwan Semiconductor Corporation. It features a drain-source voltage rating of 60 V and a continuous drain current capacity of 200 mA at room temperature. The device utilizes a compact SOT-323 surface-mount package, designed for low gate charge and fast switching performance. Key electrical characteristics include a maximum on-resistance of 10 ohms at a gate drive of 4.5 V, ensuring efficient operation in low-power applications.
Verify the complete part number including the A3G suffix against official Taiwan Semiconductor documentation to confirm specific tape-and-reel packaging or marking variations. Ensure component authenticity through authorized distribution channels and cross-reference datasheet revisions for any updated thermal or electrical specifications prior to final procurement.
Select this component for designs requiring a small-form-factor N-Channel MOSFET with moderate voltage handling. Evaluate the 10-ohm on-resistance constraint against load requirements to ensure acceptable power dissipation. Confirm that the SOT-323 thermal profile meets the system's heat management needs for continuous or pulsed current loads.
This device belongs to the TSM2N7000 series of small-signal MOSFETs from Taiwan Semiconductor. The series focuses on providing reliable switching solutions in minimal footprints. The KCT designation typically indicates specific packaging and reel configurations within the manufacturer's product line.
Consult official substitution guides for equivalent 60V N-Channel MOSFETs in SOT-323 packages. Verify pinout compatibility and on-resistance limits before replacing with generic alternatives.
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