V10D100CHM3/I

Diode Arrays Overview

The V10D100CHM3/I is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration within an SMPD (TO-263AC) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 100 V and a total maximum average forward rectified current of 10 A, with 5 A per diode. Peak forward surge current capability is rated at 100 A. Forward voltage drop is specified as 0.75 V maximum at 5 A and 25 °C, or 0.68 V maximum at 5 A and 125 °C. Reverse leakage current reaches up to 20 mA at 100 V and 125 °C. Operating junction temperature ranges from -40 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes second-generation Trench MOS Schottky technology for low forward voltage drop and reduced power losses.
• Features a very low profile typical height of 1.7 mm, optimized for automated placement processes.
• AEC-Q101 qualified for automotive applications when ordered with the HM3 suffix.
• Compliant with RoHS directives and halogen-free material categorization.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify that the ordering code includes the HM3 suffix to ensure AEC-Q101 qualification for automotive use. Confirm the delivery mode matches the required tape and reel specifications for automated assembly. Ensure compliance with JESD 201 class 2 whisker test requirements if applicable to the design constraints.

Diode Arrays Selection Notes

Select this component for designs requiring high efficiency and low thermal resistance in a compact surface-mount footprint. The TMBS technology offers superior performance compared to standard Schottky diodes in terms of forward voltage characteristics. Consider the 150 °C maximum junction temperature limit when designing thermal management solutions for high-current applications.

Diode Arrays Part Context

This device belongs to the eSMP® series of high-voltage rectifiers. It is part of Vishay's portfolio of Trench MOS Barrier Schottky products designed to replace traditional PN junction rectifiers in high-frequency switching applications. The SMPD package provides robust mechanical stability and efficient heat dissipation capabilities.

Diode Arrays Replacement Considerations

V10D100C-M3/I

Diode Arrays FAQ

What is the difference between the M3 and HM3 suffixes?

The HM3 suffix indicates that the device is AEC-Q101 qualified for automotive applications, whereas the M3 suffix denotes standard commercial grade qualification.

Is the V10D100CHM3/I suitable for high-frequency operation?

Yes, the datasheet lists high frequency DC/DC converters as a typical application, leveraging its fast recovery characteristics inherent to Schottky technology.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.