ZXMN6A08KTC

Single FETs, MOSFETs Overview

The ZXMN6A08KTC is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 7.9 A at 25°C. The device exhibits a low on-resistance (RDS(on)) of 80 mΩ at VGS=10V and 150 mΩ at VGS=4.5V. Total gate charge is 5.8 nC at VGS=10V. It operates within a temperature range of -55°C to +150°C and utilizes a DPAK-3 (TO-252-3) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Designed for high efficiency power management applications with minimized on-state resistance.
• Maintains superior switching performance alongside low conduction losses.
• Compliant with RoHS standards and defined as a "Green" component containing no halogens or antimony compounds.

Single FETs, MOSFETs Applications

• Backlighting
• DC-DC Converters
• Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix KTC against official Diodes Incorporated documentation to confirm reel size, tape width, and quantity per reel specifications. Ensure that the procurement matches the exact part marking codes and date code formats detailed in the manufacturer's ordering information section to avoid receiving variants with different packaging configurations.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-channel MOSFET with a TO-252-3 footprint is required for power management circuits. Consider the 80 mΩ RDS(on) at 10V drive for optimal efficiency. Evaluate thermal derating curves if operating above 25°C ambient temperature. Confirm that the 20V maximum gate-source voltage rating aligns with the control logic levels of the target application design.

Single FETs, MOSFETs Part Context

This device belongs to the ZXMN6A series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed using silicon technology to balance low static resistance with fast dynamic switching capabilities. The product line targets general-purpose power switching applications requiring robust performance in compact surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference pinouts, thermal characteristics, and electrical ratings before replacing components in existing designs.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the ZXMN6A08KTC?

The maximum pulsed drain current (IDM) is 24.3 A, measured under pulsed conditions with a duty cycle of 0.02 and pulse width of 300 µs.

Does the ZXMN6A08KTC include an internal body diode?

Yes, the datasheet specifies continuous and pulsed source current ratings (IS and ISM), indicating the presence of an intrinsic body diode with a forward voltage of 0.88 V typical at 4.0 A.