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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FCP13N60N $2.08 | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 1 | Bulk | TO-220-3 | Through Hole | SupreMOS™ | -55°C ~ 150°C (TJ) |
![]() FCP150N65F $5.09 | onsemi | MOSFET N-CH 650V 24A TO220-3 | Tube | TO-220-3 | Through Hole | HiPerFET™, Polar™ | -55°C ~ 150°C (TJ) |
![]() FCP165N60E $2.64 | onsemi | MOSFET N-CH 600V 23A TO220 | Tube,Tube | TO-220-3 | Through Hole | SuperFET® II | -55°C ~ 150°C (TJ) |
![]() FCP165N65S3 $3.37 | onsemi | MOSFET N-CH 650V 19A TO220-3 | Tube | TO-220-3 | Through Hole | SuperFET® III | -55°C ~ 150°C (TJ) |
![]() FCP165N65S3R0 $1.70 | Fairchild Semiconductor | FCP165N65S3R0 - POWER MOSFET, N- | Bulk | TO-220-3 | Through Hole | SuperFET® III | -55°C ~ 150°C (TJ) |
![]() FCP165N65S3R0 $1.70 | onsemi | MOSFET N-CH 650V 19A TO220-3 | Bulk,Tube | TO-220-3 | Through Hole | SuperFET® III | -55°C ~ 150°C (TJ) |
![]() FCP16N60 $3.78 | onsemi | MOSFET N-CH 600V 16A TO220-3 | Tube | TO-220-3 | Through Hole | SuperFET™ | -55°C ~ 150°C (TJ) |
![]() FCP16N60N $2.61 | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 1 | Bulk | TO-220-3 | Through Hole | SupreMOS™ | -55°C ~ 150°C (TJ) |

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