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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 600V 48A TO-263Tape & Reel (TR)TO-263 (D2PAK)Surface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-263AATubeTO-263AASurface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-263Tape & Reel (TR)TO-263 (D2PAK)Surface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 1000V 8A TO-263AATubeTO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 90A TO-263AATubeTO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 14A TO-263AATubeTO-263AASurface MountHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1000V 16A TO-263AATubeTO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT 600V 120A PLUS264TubePLUS264™Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
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