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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 1200V 40A TO-263AATubeTO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 36A TO-263AATubeTO-263AASurface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 36A TO-263Tape & Reel (TR)TO-263 (D2PAK)Surface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 2500V 30A TO-263HVTubeTO-263HVSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT 2500V 30A TO-263HVTape & Reel (TR)TO-263HVSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT 600V 40A TO-263AATubeTO-263AASurface MountHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 48A TO-263AATubeTO-263AASurface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 60A TO-263AATubeTO-263AASurface MountGenX3™-55°C ~ 150°C (TJ)
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