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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 600V 15A ISOPLUS220TubeISOPLUS220™Through HoleHiPerFAST™-40°C ~ 150°C (TJ)
IXYSIGBT 600V 15A ISOPLUS220TubeISOPLUS220™Through HoleHiPerFAST™-40°C ~ 150°C (TJ)
IXYSIGBT PT 600V 20A ISOPLUS220TubeISOPLUS220™Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 20A ISOPLUS220TubeISOPLUS220™Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 2500V 23A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT 3000V 22A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT NPT 2500V 30A ISOPLUS I4PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT 3000V 27A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
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