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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 4000V 30A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1700V 44A ISOPLUS I4PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT 3000V 36A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 300V 75A TO-247ADTubeTO-247ADThrough HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 1000V 20A TO-247ADTubeTO-247ADThrough Hole--
IXYSIGBT 1000V 20A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT 1000V 20A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1700V 20A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
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