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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 75A TO-268AATubeTO-268AASurface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 75A TO-268HVTape & Reel (TR)TO-268HV (IXGT)Surface Mount--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1700V 75A TO-268AATubeTO-268AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1700V 75A TO-268AATape & Reel (TR),Cut Tape (CT)TO-268AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1700V 32A TO-268AATubeTO-268AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT 600V 60A TO-268AATubeTO-268AASurface MountHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 60A TO-268AATubeTO-268AASurface MountHiPerFAST™, Lightspeed™-55°C ~ 150°C (TJ)
IXYSIGBT 900V 64A TO-268AATubeTO-268AASurface MountHiPerFAST™-55°C ~ 150°C (TJ)
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