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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 1700V 6A TO-268Tape & Reel (TR)TO-268Surface Mount--55°C ~ 150°C (TJ)
IXYSIGBT 1700V 6A TO-268HVTubeTO-268HV (IXGT)Surface Mount--55°C ~ 150°C (TJ)
IXYSIGBT 1700V 6A TO-268HVTape & Reel (TR)TO-268HV (IXGT)Surface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-268AATubeTO-268AASurface MountGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-268Tape & Reel (TR)TO-268Surface MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT NPT 2500V 60A PLUS-220SMDTubePLUS-220SMDSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1700V 170A PLUS247TubePLUS247™-3Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 240A PLUS247TubePLUS247™-3Through HoleGenX3™-55°C ~ 150°C (TJ)
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