SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Search productSearch post
— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT 600V 75A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 75A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
![]() IXGX55N120A3H1 $12.34 | IXYS | IGBT PT 1200V 125A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™ | - |
| IXYS | IGBT PT 600V 75A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 75A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
![]() IXGX72N60B3H1 $6.55 | IXYS | IGBT PT 600V 75A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXGX72N60C3H1 $6.50 | IXYS | IGBT PT 600V 75A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXGX75N250 $91.17 | IXYS | IGBT NPT 2500V 170A PLUS247 | Tube | PLUS247™-3 | Through Hole | - | -55°C ~ 150°C (TJ) |

The activity of extra discounts on wholesale prices is in full swing…
Please fill in your contact information and we will send you the latest wholesale price list.
