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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 30A TO-263AABoxTO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 35A TO-263AABoxTO-263AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 20A TO-247ADBoxTO-247ADThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 30A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 30A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 35A TO-247ADBulkTO-247ADThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 48A TO-247ADTubeTO-247ADThrough HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 48A TO-247ADTubeTO-247ADThrough HoleHiPerFAST™-55°C ~ 150°C (TJ)
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