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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT PT 1200V 30A TO-263AA | Box | TO-263AA | Surface Mount | - | -55°C ~ 150°C (TJ) | |
![]() IXSA20N60B2D1 $2.35 | IXYS | IGBT PT 600V 35A TO-263AA | Box | TO-263AA | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() IXSH10N60B2D1 $2.10 | IXYS | IGBT PT 600V 20A TO-247AD | Box | TO-247AD | Through Hole | - | -55°C ~ 150°C (TJ) |
| IXYS | IGBT PT 1200V 30A TO-247AD | Tube | TO-247AD | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 1200V 30A TO-247AD | Tube | TO-247AD | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() IXSH20N60B2D1 $2.81 | IXYS | IGBT PT 600V 35A TO-247AD | Bulk | TO-247AD | Through Hole | - | -55°C ~ 150°C (TJ) |
| IXYS | IGBT PT 600V 48A TO-247AD | Tube | TO-247AD | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 48A TO-247AD | Tube | TO-247AD | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) |

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