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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 260A PLUS247TubePLUS247™-3Through HoleGenX3™-
IXYSIGBT PT 1200V 230A PLUS247TubePLUS247™-3Through HoleGenX3™-
IXYSIGBT PT 1200V 5A TO-252AABulkTO-252AASurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT NPT 2500V 32A ISOPLUS I4PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1200V 55A TO-247ADBulkTO-247ADThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1200V 25A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT 1200V 45A ISOPLUS247TubeISOPLUS247™Through Hole--
IXYSIGBT PT 600V 20A TO-263AABulkTO-263AASurface Mount--55°C ~ 150°C (TJ)
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