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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 70A PLUS247TubePLUS247™-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 1200V 70A PLUS247TubePLUS247™-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT 1200V 70A PLUS247TubePLUS247™-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 300V 400A PLUS247TubePLUS247™-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 75A PLUS247TubePLUS247™-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 95A PLUS247TubePLUS247™-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 600V 75A TO-247ADTubeTO-247ADThrough HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A PLUS247TubePLUS247™-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
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