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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT PT 1200V 70A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 1200V 70A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
![]() IXGX35N120CD1 $10.80 | IXYS | IGBT 1200V 70A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT PT 300V 400A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 75A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
![]() IXGX50N120C3H1 $12.72 | IXYS | IGBT PT 1200V 95A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXGX50N60AU1 $12.30 | IXYS | IGBT 600V 75A TO-247AD | Tube | TO-247AD | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT PT 600V 75A PLUS247 | Tube | PLUS247™-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) |

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