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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 200A PLUS247TubePLUS247™-3Through HoleGenX3™-
IXYSIGBT PT 600V 200A PLUS247TubePLUS247™-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 200A PLUS247BulkPLUS247™-3Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 280A PLUS247TubePLUS247™-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 1400V 60A PLUS247TubePLUS247™-3Through HoleGenX3™-
IXYSIGBT PT 600V 320A PLUS247TubePLUS247™-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 500A PLUS247TubePLUS247™-3Through HoleGenX3™-
IXYSIGBT NPT 1700V 75A PLUS247BoxPLUS247™-3Through Hole--55°C ~ 150°C (TJ)
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