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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXXK200N60B3 $11.53 | IXYS | IGBT PT 600V 380A TO-264 | Tube | TO-264 (IXXK) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXK200N60C3 $10.74 | IXYS | IGBT PT 600V 340A TO-264 | Tube | TO-264 (IXXK) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXK200N65B4 $19.61 | IXYS | IGBT PT 650V 370A TO-264 | Tube | TO-264 (IXXK) | Through Hole | GenX4™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXK300N60B3 $26.51 | IXYS | IGBT PT 600V 550A TO-264 | Tube | TO-264 (IXXK) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXK300N60C3 $16.54 | IXYS | IGBT PT 600V 510A TO-264 | Tube | TO-264 (IXXK) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
| IXYS | IGBT 650V 440A SOT-227B | Tube | SOT-227B | Chassis Mount | XPT™, GenX4™ | -55°C ~ 175°C (TJ) | |
![]() IXXN340N65B4 $21.67 | IXYS | IGBT PT 650V 520A SOT-227B | Tube | SOT-227B | Chassis Mount | GenX4™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXP12N65B4D1 $1.63 | IXYS | IGBT 650V 38A TO-220-3 | Tube | TO-220-3 | Through Hole | XPT™, GenX4™ | -55°C ~ 175°C (TJ) |

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