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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 600V 380A TO-264TubeTO-264 (IXXK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 600V 340A TO-264TubeTO-264 (IXXK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 370A TO-264TubeTO-264 (IXXK)Through HoleGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 600V 550A TO-264TubeTO-264 (IXXK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 600V 510A TO-264TubeTO-264 (IXXK)Through HoleGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 440A SOT-227BTubeSOT-227BChassis MountXPT™, GenX4™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 520A SOT-227BTubeSOT-227BChassis MountGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 38A TO-220-3TubeTO-220-3Through HoleXPT™, GenX4™-55°C ~ 175°C (TJ)
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