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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 600V 120A TO-220-3TubeTO-220-3Through HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT 600V 33A TO-3PTubeTO-3PThrough HoleXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 600V 145A ISOPLUS247TubeISOPLUS247™Through HoleGenX3™, XPT™-
IXYSIGBT PT 650V 150A ISOPLUS247TubeISOPLUS247™Through HoleGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT DISCRETE TO-268HVTube----
IXYSIGBT PT 600V 200A PLUS247TubePLUS247™-3Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 170A PLUS247TubePLUS247™-3Through HoleGenX3™, XPT™-
IXYSIGBT PT 650V 240A PLUS247TubePLUS247™-3Through HoleGenX4™, XPT™-55°C ~ 175°C (TJ)
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