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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXXP50N60B3 $4.41 | IXYS | IGBT 600V 120A TO-220-3 | Tube | TO-220-3 | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXXQ30N60B3M $4.92 | IXYS | IGBT 600V 33A TO-3P | Tube | TO-3P | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXXR100N60B3H1 $13.91 | IXYS | IGBT PT 600V 145A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | GenX3™, XPT™ | - |
![]() IXXR110N65B4H1 $18.20 | IXYS | IGBT PT 650V 150A ISOPLUS247 | Tube | ISOPLUS247™ | Through Hole | GenX4™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXXT100N75B4HV $15.13 | IXYS | IGBT DISCRETE TO-268HV | Tube | - | - | - | - |
![]() IXXX100N60B3H1 $9.21 | IXYS | IGBT PT 600V 200A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™, XPT™ | -55°C ~ 150°C (TJ) |
![]() IXXX100N60C3H1 $9.21 | IXYS | IGBT PT 600V 170A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX3™, XPT™ | - |
![]() IXXX110N65B4H1 $17.67 | IXYS | IGBT PT 650V 240A PLUS247 | Tube | PLUS247™-3 | Through Hole | GenX4™, XPT™ | -55°C ~ 175°C (TJ) |

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