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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 650V 20A TO-263AATubeTO-263AASurface MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 50A TO-263AATape & Reel (TR)TO-263AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 650V 50A TO-263AATubeTO-263AASurface MountXPT™, GenX3™-55°C ~ 175°C (TJ)
IXYSIGBT DISCRETE TO-263HVTube----
IXYSIGBT PT 1200V 106A TO-263HVTubeTO-263HVSurface MountGenX4™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 130A TO-263BulkTO-263 (D2PAK)Surface MountGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 130A TO-263AATubeTO-263AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT PT 650V 132A TO-263AATape & Reel (TR)TO-263AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
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