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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXYH100N65A3 $5.73 | IXYS | IGBT 650V 240A TO-247 | Tube | TO-247 (IXTH) | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXYH100N65C3 $8.85 | IXYS | IGBT PT 650V 200A TO-247 | Tube | TO-247 (IXTH) | Through Hole | GenX3™, XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH100N65C5 $10.66 | IXYS | IGBT TRENCH FS 650V 230A TO-247 | Bulk | TO-247 (IXYH) | Through Hole | Gen5 XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH10N170C $8.16 | IXYS | IGBT 1700V 36A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH10N170CV1 $9.85 | IXYS | IGBT 1700V 36A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™ | -55°C ~ 175°C (TJ) |
![]() IXYH120N65A5 $9.52 | IXYS | IGBT PT 650V 290A TO-247 | Tube | TO-247 (IXTH) | Through Hole | XPT™, GenX5™ | -55°C ~ 175°C (TJ) |
![]() IXYH120N65B3 $6.42 | IXYS | IGBT PT 650V 340A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |
![]() IXYH120N65C3 $6.42 | IXYS | IGBT PT 650V 260A TO-247 | Tube | TO-247 (IXYH) | Through Hole | XPT™, GenX3™ | -55°C ~ 175°C (TJ) |

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