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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT TRENCH FS 650V 110A TO-263BulkTO-263 (D2PAK)Surface MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 122A TO-263BulkTO-263 (D2PAK)Surface MountGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT TRENCH FS 650V 134A TO-263BulkTO-263 (D2PAK)Surface MountGen5 XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 2500V 29A TO-263HVTubeTO-263HVSurface MountXPT™-55°C ~ 175°C (TJ)
IXYSIGBT 900V 20A TO-263AATubeTO-263AASurface MountGenX3™, XPT™-55°C ~ 175°C (TJ)
IXYSIGBT 1200V 164A PLUS264TubePLUS264™Through HoleGenX3™, XPT™-55°C ~ 150°C (TJ)
IXYSIGBT 4500V 23A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleXPT™-55°C ~ 150°C (TJ)
Littelfuse Inc.IGBT 4500V 60A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through HoleXPT™-55°C ~ 150°C (TJ)
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